WOLFSPEED

功率场效应管, MOSFET, N沟道, 72 A, 1.7 kV, 0.045 ohm, 20 V, 2.6 V

INFINEON

功率场效应管, MOSFET, N沟道, 11.4 A, 650 V, 0.28 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 18 A, 55 V, 60 mohm, 10 V, 2 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V

INFINEON

晶体管, MOSFET, P沟道, 14 A, -100 V, 200 mohm, -10 V, -4 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm

DIODES INC.

单晶体管 双极, PNP, -60 V, 200 MHz, 300 mW, -600 mA, 100 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.297 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 8.4 A, 600 V, 0.68 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 90 A, 200 V, 0.0138 ohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, PNP, -40 V, 1 W, -1 A, 40 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 40 V, 790 ohm, 10 V, 1.7 V

DIODES INC.

单晶体管 双极, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 100 hFE

NEXPERIA

单晶体管 双极, NPN, 60 V, 150 MHz, 2.1 W, 6 A, 440 hFE

NEXPERIA

晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00186 ohm, 10 V, 1.65 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -150 V, 4 MHz, 25 W, -1.5 A, 40 hFE

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 7.1 A, 600 V, 0.98 ohm, 10 V, 3.9 V

NEXPERIA

双极晶体管阵列, 双NPN, 30 V, 1.3 W, 500 mA, 4000 hFE, SOT-89

INFINEON

功率场效应管, MOSFET, N沟道, 16.8 A, 600 V, 0.207 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V

INFINEON

单晶体管, IGBT, 30 A, 2.1 V, 312 W, 1.6 kV, TO-247, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V

INFINEON

单晶体管, IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-247AC, 3 引脚

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 300 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 10.3 A, 600 V, 0.54 ohm, 10 V, 3 V