VISHAY

晶体管, MOSFET, N沟道, 8 A, 20 V, 0.0225 ohm, 10 V, 600 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 33 A, 150 V, 0.067 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, NPN, 45 V, 180 MHz, 420 mW, 1 A, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 1 V

INFINEON

功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0027 ohm, 10 V, 2.8 V

INFINEON

晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 34A

VISHAY

晶体管, MOSFET, P沟道, -6 A, -20 V, 0.031 ohm, -4.5 V, -1 V

VISHAY

场效应管, MOSFET, N沟道, 60V, 8.7A, POWERPAK 1212

VISHAY

晶体管, MOSFET, N沟道, 50 A, 40 V, 0.003 ohm, 10 V, 3 V

ON SEMICONDUCTOR

射频双极晶体管

ON SEMICONDUCTOR

单晶体管 双极, 音频, NPN, 140 V, 2 MHz, 250 W, 20 A, 150 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.6 A, 800 V, 1.5 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -45 V, 150 MHz, 500 mW, -100 mA, 200 hFE

MICRO COMMERCIAL COMPONENTS

双极性晶体管, 双NPN, 45VDC, SOT-363

INFINEON

晶体管, MOSFET, N沟道, 50 A, 150 V, 16 mohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, NPN, 150 V, 33 MHz, 730 mW, 2 A, 240 hFE

ROHM

晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V

STMICROELECTRONICS

单晶体管 双极, NPN, 45 V, 12.5 W, 1.5 A, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -40 V, 200 MHz, 350 mW, -800 mA, 30 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 600V, 22A, TO-220F