INFINEON

功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 70 V, 4 MHz, 40 W, 7 A, 2.3 hFE

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 60V, 0.0076Ω, 100A, TO-220-3

INFINEON

晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0065 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 0.55 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 10.1 A, 650 V, 0.54 ohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, TrenchMOS, N沟道, 37 A, 80 V, 0.0205 ohm, 10 V, 1.7 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 18 A, 600 V, 0.168 ohm, 10 V, 3 V

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

INFINEON

功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 57A, TO-220AB

ROHM

晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV

STMICROELECTRONICS

单晶体管, IGBT, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 引脚

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 60 A, 300 V, 0.033 ohm, 10 V, 3.75 V

INFINEON

晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V

INFINEON

晶体管, MOSFET, N沟道, 42 A, 55 V, 0.011 ohm, 10 V, 3 V

MICROCHIP

晶体管, MOSFET, N沟道, 136 mA, 450 V, 20 ohm, 0 V

TAIWAN SEMICONDUCTOR

晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV

DIODES INC.

单晶体管 双极, PNP, 60 V, 250 MHz, 1.25 W, 3 A, 200 hFE

INFINEON

单晶体管, IGBT, 8 A, 1.65 V, 70 W, 650 V, TO-220, 3 引脚

VISHAY

功率场效应管, MOSFET, N沟道, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 600V, 47A, TO247AC-3

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 20 A, 40 V, 0.0047 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 93 A, 30 V, 3.5 mohm, 10 V, 1 V