
ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 1.5 V, 117 W, 600 V, TO-220, 3 引脚

NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 60 A, 25 V, 0.00646 ohm, 10 V, 1.76 V

INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 560 V, 0.85 ohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 15.1 A, 650 V, 0.36 ohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V

STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 15 A, 40 V, 0.008 ohm, 10 V, 2 V

VISHAY
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.00325 ohm, 10 V, 3.4 V

ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -6 A, -60 V, 0.037 ohm, -10 V, -3 V

INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V

TEXAS INSTRUMENTS
芯片

NEXPERIA
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.002 ohm, 10 V, 1.7 V

INFINEON
晶体管, MOSFET, N沟道, 21 A, 560 V, 0.16 ohm, 10 V, 3 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V