DIODES INC.

晶体管, MOSFET, N沟道, 180 mA, 200 V, 10 ohm, 5 V, 1.5 V

ON SEMICONDUCTOR

达林顿双极晶体管

INFINEON

功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.22 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0033 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -80 V, 40 MHz, 2 W, -10 A, 40 hFE

NEXPERIA

单晶体管 双极, PNP, -100 V, 125 MHz, 25 W, -2 A, 20 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 160 V, 225 mW, 600 mA, 30 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, N沟道

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, 达林顿, PNP, 120 V, 160 MHz, 2 W, -2 A, 3000 hFE

STMICROELECTRONICS

单晶体管, IGBT, 20 A, 2.5 V, 60 W, 600 V, TO-220, 3 引脚

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 16.7 A, 800 V, 0.25 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0074 ohm, 10 V, 2.7 V

INFINEON

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 330 hFE

INFINEON

晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0018 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V

NEXPERIA

晶体管, MOSFET, N沟道, 89 A, 100 V, 8.16 mohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, P沟道, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.35 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 120 A, 600 V, 600 W, 600 V, TO-247AB, 3 引脚