ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 90 A, 60 V, 0.003 ohm, 10 V, 1.7 V

INFINEON

晶体管, MOSFET, N沟道, 37 A, 150 V, 42 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 65 A, 650 V, 0.0354 ohm, 10 V, 4.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.155 ohm, 10 V, 3.5 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 75 A, 650 V, 0.0195 ohm, 10 V, 4.5 V

VISHAY

晶体管, MOSFET, N沟道, 18.4 A, 100 V, 0.0073 ohm, 10 V, 1.5 V

VISHAY

晶体管, MOSFET, P沟道, -75 A, -30 V, 5.5 mohm, -10 V, -1 V

MULTICOMP

单晶体管 双极, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 125 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 90 V, 85 W, 20 A

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.255 ohm, 10 V, 3 V

STMICROELECTRONICS

Power MOSFET, N Channel, 66 A, 600 V, 0.037 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 46 A, 200 V, 0.055 ohm, 10 V, 4 V

NEXPERIA

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

MULTICOMP

单晶体管 双极, 通用, NPN, 100 V, 125 W, 25 A, 25 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, FS沟槽, 10 A, 2.9 V, 69 W, 1.2 kV, TO-252, 3 引脚

INFINEON

单晶体管, IGBT, 10 A, 2.05 V, 110 W, 600 V, TO-263, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V

VISHAY

场效应管, MOSFET, N沟道, 600V, 73A, TO-247AC-3

INFINEON

晶体管, MOSFET, N沟道, 42 A, 40 V, 8230 μohm, 10 V, 2 V

NEXPERIA

晶体管, MOSFET, TrenchMOS, N沟道, 62 A, 80 V, 0.0113 ohm, 10 V, 1.7 V

INFINEON

功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 50 A, 60 V, 18 mohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V

INFINEON

场效应管, MOSFET