ON SEMICONDUCTOR

单晶体管, IGBT, 24 A, 1.4 V, 54 W, 600 V, TO-3PF, 3 引脚

ON SEMICONDUCTOR

晶体管, IGBT, 1.4V, 24A, TO-3PF-3

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 59 A, 300 V, 0.047 ohm, 10 V, 5 V

INFINEON

单晶体管, IGBT, 40 A, 2.35 V, 215 W, 600 V, TO-220AB, 3 引脚

VISHAY

双路场效应管, MOSFET, N和P沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 42A, TO-220AB

ON SEMICONDUCTOR

单晶体管 双极, PNP, 375 V, 10 MHz, 2 W, 1 A, 10 hFE

NEXPERIA

单晶体管 双极, PNP, -20 V, 85 MHz, 770 mW, -6.6 A, 400 hFE

NEXPERIA

双极晶体管阵列, AEC-Q101, 双NPN, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0055 ohm, 10 V, 1.9 V

VISHAY

功率场效应管, MOSFET, N沟道, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 86 A, 55 V, 8 mohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, 音频, PNP, -120 V, 30 Hz, 50 W, -8 A, 40 hFE

VISHAY

场效应管, MOSFET, N沟道, 600V, 21A, TO-220AB-3

INFINEON

晶体管, MOSFET, N沟道, 110 A, 55 V, 8 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -30 V, 150 MHz, 500 mW, -100 mA, 200 hFE

DIODES INC.

晶体管, MOSFET, AEC-Q101, N沟道, 4.2 A, 20 V, 0.09 ohm, 4.5 V, 1 V

INFINEON

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V

NEXPERIA

单晶体管 双极, PNP, -150 V, 115 MHz, 520 mW, -1 A, 220 hFE

MULTICOMP

单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 125 W, 25 A, 25 hFE

INFINEON

晶体管, MOSFET, N沟道, 150 A, 30 V, 3.8 mohm, 10 V, 2.3 V

NEXPERIA

晶体管, MOSFET, N沟道, 32 A, 100 V, 29.3 mohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 100 V, 3 MHz, 65 W, 6 A, 15 hFE