VISHAY

场效应管, MOSFET, N沟道, 80V, 30A, SOIC

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 70 A, 150 V, 0.023 ohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, PNP, -40 V, 150 MHz, 1 W, -1 A, 160 hFE

INFINEON

晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0026 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0015 ohm, 10 V, 1.45 V

VISHAY

晶体管, MOSFET, N沟道, 110 A, 30 V, 0.0033 ohm, 10 V, 1 V

INFINEON

晶体管 双极-射频, NPN, 6 V, 14 GHz, 210 mW, 35 mA, 90 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.53 ohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 200 V, 10 MHz, 60 W, 7 A, 10 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 15 A, 30 V, 8 mohm, 10 V, 1.8 V

DIODES INC.

单晶体管 双极, 通用, PNP, 60 V, 150 MHz, 1 W, 1 A, 50 hFE

ROHM

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

INFINEON

单晶体管, IGBT, 15 A, 1.65 V, 33.3 W, 650 V, TO-220, 3 引脚

VISHAY

功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.4 ohm, 10 V, 4 V

NXP

晶体管, JFET, JFET, 30 V, 7 mA, 70 mA, 6 V, SOT-23, JFET

ON SEMICONDUCTOR

晶体管, NPN

NEXPERIA

单晶体管 双极, PNP, -60 V, 145 MHz, 420 mW, -1 A, 100 hFE

INFINEON

晶体管, MOSFET, N沟道, 100 A, 75 V, 7.8 mohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0065 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 100 V, 80 W, 12 A, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.34 ohm, 10 V, 4.5 V

INFINEON

晶体管, MOSFET, N沟道, 11.1 A, 500 V, 0.45 ohm, 13 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0016 ohm, 10 V, 2 V