
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.0515 ohm, 10 V, 2 V

TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 1.8 mohm, 4.5 V, 1.4 V

ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 45 A, 60 V, 0.021 ohm, 10 V, 2.8 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 1.5 W, -1.2 A, 25 hFE

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -30 V, 100 MHz, 500 mW, -1 A, 70 hFE

VISHAY
晶体管, MOSFET, N沟道, 26 A, 150 V, 0.036 ohm, 10 V, 4.5 V

ROHM
晶体管 双极预偏置/数字, 双路NPN, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V

STMICROELECTRONICS
单晶体管, IGBT, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.3 A, 100 V, 0.075 ohm, 10 V, 1.7 V

VISHAY
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V

INFINEON
功率场效应管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V