
VISHAY
场效应管, MOSFET, N沟道

ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V

ON SEMICONDUCTOR
射频双极晶体管

INFINEON
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V

INFINEON
单晶体管, IGBT, 45 A, 2.77 V, 200 W, 1.2 kV, TO-247AC, 3 引脚

INFINEON
单晶体管, IGBT, 80 A, 3.39 V, 595 W, 1.2 kV, TO-274AA, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 58 A, 800 V, 0.054 ohm, 10 V, 4.5 V

INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V

INFINEON
单晶体管, IGBT, 通用, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 830 mA, 250 V, 1.38 ohm, 10 V, 5 V

INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V

NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 510 mW, 1 A, 70 hFE, SOT-1118

INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 0.0094 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 3.5 mohm, 10 V, 1 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.3 A, 800 V, 1.9 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -600 mA, 50 hFE

NTE ELECTRONICS
小信号双极性晶体管