VISHAY

晶体管, P沟道

STMICROELECTRONICS

单晶体管, IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 128 A, 150 V, 0.0078 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 25 MHz, 20 W, 2 A, 200 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0032 ohm, 10 V, 1.3 V

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 305 mA, 50 V, 2 ohm, 5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 23.5 A, 600 V, 240 mohm, 10 V, 5 V

NEXPERIA

单晶体管 双极, 通用, PNP, 45 V, 250 mW, 100 mA, 150 hFE

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 40 W, 4 A, 750 hFE

SEMELAB

晶体管, MOSFET, P沟道, 8 A, -160 V, 1.5 ohm, -1.5 V

INFINEON

晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -55V, 12A, TO-220AB

VISHAY

晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V

NTE ELECTRONICS

场效应管, JFET, N沟道, -30V, TO-92

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -8V, SC-88

INFINEON

功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, P沟道, -11.4A, -30V, 2.5W

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 9 A, 800 V, 900 mohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.038 ohm, 4.5 V, 670 mV

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, N通道, 240 A, 1.6 V, 882 W, 650 V, TO-247, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0067 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 75 V, 0.003 ohm, 10 V, 3.1 V

VISHAY

晶体管, MOSFET, N沟道, 22 A, 500 V, 230 mohm, 10 V, 4 V

STMICROELECTRONICS

单晶体管 双极, 达林顿, PNP, -60 V, 65 W, 5 A, 1000 hFE