NEXPERIA

单晶体管 双极, PNP, -45 V, 145 MHz, 500 mW, -1 A, 63 hFE

INFINEON

晶体管, MOSFET, N沟道, 350 A, 75 V, 0.00146 ohm, 20 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -100 V, 1.75 W, -8 A, 100 hFE

VISHAY

双路场效应管, MOSFET, LITTLE FOOT, 双N沟道, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V

STMICROELECTRONICS

单晶体管 双极, PNP, -600 V, 1.6 W, -500 mA, 120 hFE

ON SEMICONDUCTOR

达林顿双极晶体管

MULTICOMP

单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 125 hFE

NTE ELECTRONICS

单晶体管 双极, NPN, 80 V, 400 MHz, 800 mW, 1 A, 300 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 100 V, 65 W, 6 A, 15 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.245 ohm, 10 V, 4.5 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.91 ohm, 10 V, 5 V

DIODES INC.

双路场效应管, MOSFET, AEC-Q101, 双N沟道, 280 mA, 50 V, 2 ohm, 5 V, 1 V

STMICROELECTRONICS

单晶体管 双极, NPN, 60 V, 40 W, 3 A, 50 hFE

MULTICOMP

单晶体管 双极, PNP, -45 V, 200 MHz, 330 mW, -1 A, 250 hFE

NXP

场效应管, MOSFET, 射频, N通道, 40V, TO-272

VISHAY

功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 600 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -40 V, 250 MHz, 350 mW, -200 mA, 30 hFE

WOLFSPEED

功率场效应管, MOSFET, C3M SiC, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V