DIODES INC.

晶体管, MOSFET, P沟道, -4.6 A, -20 V, 0.029 ohm, -4.5 V, 960 mV

INFINEON

晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V

INFINEON

双路场效应管, MOSFET, 双P沟道, 9 A, -20 V, 18 mohm, -4.5 V, -1 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 2 V

NEXPERIA

晶体管, MOSFET, P沟道, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V

INFINEON

单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-252, 3 引脚

VISHAY

MOSFET, N CHANNEL, 12V, 35A, POWERPAK 1212-8

VISHAY

晶体管, MOSFET, P沟道, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V

VISHAY

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR

单晶体管 双极, 音频, NPN, 250 V, 4 MHz, 200 W, 16 A, 75 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 22 kohm, 47 kohm

NEXPERIA

单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 100 hFE

INFINEON

晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V

ON SEMICONDUCTOR

双极性晶体管, NPN, HFE 63

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V

INFINEON

功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV

VISHAY

场效应管, MOSFET, N沟道, 600V, 21A, TO-247AC-3

DIODES INC.

晶体管, MOSFET, N沟道, 3.8 A, 70 V, 130 mohm, 10 V, 1 V

NEXPERIA

单晶体管 双极, PNP, -20 V, 140 MHz, 500 mW, -1 A, 160 hFE