INFINEON

晶体管, MOSFET, N沟道, 160 A, 60 V, 3.3 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 1.2KV, 41A

VISHAY

单晶体管 双极, N沟道, 190 A, 100 V, 0.0054 ohm, 10 V, 3.3 V

STMICROELECTRONICS

单晶体管 双极, NPN, 60 V, 130 MHz, 1.4 W, 3 A, 80 hFE

INFINEON

晶体管, MOSFET, N沟道, 120 A, 80 V, 0.002 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 18 A, 55 V, 0.06 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 51 A, 55 V, 13.5 mohm, 10 V, 3 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 引脚

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00111 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V

VISHAY

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V

INFINEON

功率场效应管, MOSFET, N沟道, 18 A, 650 V, 0.11 ohm, 10 V, 3.5 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 160 W, 20 A, 18000 hFE

NEXPERIA

单晶体管 双极, 达林顿, NPN, 45 V, 200 MHz, 1.3 W, 1 A, 2000 hFE

TEXAS INSTRUMENTS

单晶体管 双极, 双N沟道, 30 V, 6.7 ohm, 4.5 V, 750 mV

INFINEON

晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 10 A, 800 V, 0.93 ohm, 10 V, 5 V

INFINEON

功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 3 V

TEXAS INSTRUMENTS

功率晶体管

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB

ON SEMICONDUCTOR

单晶体管 双极, AEC-Q101, PNP, -40 V, 160 MHz, 2 W, -3 A, 100 hFE