INFINEON

功率场效应管, MOSFET, N沟道, 13.1 A, 600 V, 0.41 ohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管, IGBT, 160 A, 1.7 V, 454 W, 1.2 kV, TO-247, 3 引脚

ROHM

晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.4 ohm, 10 V, 2.5 V

ROHM

晶体管, MOSFET, N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V

ROHM

晶体管, MOSFET, N沟道, 2.5 A, 30 V, 98 mohm, 4.5 V, 1.5 V

ROHM

晶体管, MOSFET, N沟道, 1.5 A, 20 V, 130 mohm, 4.5 V

ROHM

晶体管 双极预偏置/数字, 双路, 双路 PNP, -50 V, -100 mA, 47 kohm, 47 kohm

ROHM

晶体管 双极预偏置/数字, 双路NPN, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

ROHM

单晶体管 双极, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE

ROHM

双路场效应管, MOSFET, 双N沟道, 1.5 A, 30 V, 340 mohm, 4.5 V, 1.5 V

INFINEON

晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V

INFINEON

晶体管, MOSFET, HEXFET, N沟道, 140 A, 100 V, 0.0056 ohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23

INFINEON

晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0068 ohm, 10 V, 2 V

WOLFSPEED

功率场效应管, MOSFET, N沟道, 35 A, 900 V, 0.065 ohm, 15 V, 2.1 V

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.012 ohm, 10 V, 1.6 V

INFINEON

晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, NPN, 20 V, 140 MHz, 1 W, 3.5 A, 450 hFE

VISHAY

晶体管, MOSFET, N沟道, 6 A, 400 V, 0.85 ohm, 10 V, 3 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

INFINEON

晶体管, MOSFET, N沟道, 15 A, 100 V, 105 mohm, 10 V, 2 V

RENESAS

晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.173 ohm, 4.5 V

ON SEMICONDUCTOR

双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 61 A, 200 V, 0.034 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 30 V, 100 MHz, 710 mW, 1 A, 200 hFE