NEXPERIA

晶体管, MOSFET, TrenchMOS, N沟道, 56 A, 100 V, 0.014 ohm, 10 V, 1.7 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V

ROHM

单晶体管 双极, NPN, 50 V, 180 MHz, 150 mW, 150 mA, 180 hFE

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -100V, 13A, D-PAK

NEXPERIA

双极晶体管阵列, BISS 负载开关, NPN, PNP, 40 V, 200 mW, -500 mA, 200 hFE, SOT-363

VISHAY

晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 125 W, 10 A, 500 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0013 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -1.7 V

INFINEON

晶体管, MOSFET, P沟道, -70 A, -30 V, 0.005 ohm, -10 V, -1.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.1 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 17.5 A, 60 V, 14 mohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -65 V, 150 MHz, 310 mW, -100 mA, 420 hFE

VISHAY

晶体管, P沟道

DIODES INC.

双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26

VISHAY

晶体管, MOSFET, P沟道, 11 A, -60 V, 280 mohm, -10 V, -4 V

MULTICOMP

单晶体管 双极, NPN, 45 V, 250 mW, 100 mA, 150 hFE

ROHM

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率

INFINEON

晶体管, MOSFET, HEXFET, N沟道, 195 A, 40 V, 1.75 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 210 A, 60 V, 0.0024 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, -40 V, 900 μA, 4.5 mA, -4 V, SOT-23, JFET

ON SEMICONDUCTOR

MOSFET Transistor, N Channel, 2.5 A, 20 V, 0.036 ohm, 4.5 V, 850 mV

INFINEON

晶体管, MOSFET, N沟道, 21 A, 100 V, 28.5 mohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, AEC-Q101, PNP, -300 V, 10 MHz, 15 W, -500 mA, 30 hFE