ON SEMICONDUCTOR

单晶体管 双极, AEC-Q100, PNP, -250 V, 30 MHz, 200 W, -15 A, 45 hFE

DIODES INC.

单晶体管 双极, NPN, 150 V, 100 MHz, 500 mW, 1 A, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 64 A, 3.2 V, 500 W, 1.2 kV, TO-264, 3 引脚

ON SEMICONDUCTOR

单晶体管 双极, PNP, 250 V, 3 MHz, 150 W, 15 A, 15 hFE

ROHM

晶体管, MOSFET, N沟道, 2 A, 60 V, 340 mohm, 10 V, 2.5 V

VISHAY

晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV

VISHAY

晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0076 ohm, -10 V, -1.5 V

ROHM

双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 1 V

MULTICOMP

单晶体管 双极, NPN, 325 V, 2.8 MHz, 100 W, 3.5 A, 30 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 140 V, 20 MHz, 100 W, 12 A, 50 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 75 A, 55 V, 8 mohm, 10 V, 3 V

TEXAS INSTRUMENTS

N CHANNEL MOSFET, 25V, 60A, SON

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 30V, 4A, SOT-23

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 30 V, 4 V

VISHAY

场效应管, MOSFET, P沟道

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 30V, 161A, D-PAK

ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 2.5 MHz, 90 W, 15 A, 5 hFE

MULTICOMP

单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE

INFINEON

晶体管, MOSFET, N沟道, 62 A, 200 V, 26 mohm, 10 V, 5 V

TEXAS INSTRUMENTS

芯片, 达林顿晶体管阵列, NPN

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.03 ohm, 10 V, 3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.9 V

VISHAY

晶体管, MOSFET, P沟道, 1 A, -100 V, 600 mohm, -10 V, -4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 引脚

NEXPERIA

晶体管, BISS型, NPN, 50V, 3A, 3-SOT-89