STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, NPN, 50 V, 330 MHz, 15 W, 8 A, 200 hFE

INFINEON

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 2.8 V

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, PNP, -100 V, 3 MHz, 20 W, -6 A, 15 hFE

INFINEON

晶体管, MOSFET, CoolMOS, N沟道, 52 A, 500 V, 0.06 ohm, 10 V, 3 V

ROHM

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm

GENESIC SEMICONDUCTOR

超级结晶体管, 碳化硅, TO-247AB

INFINEON

晶体管, MOSFET, P沟道, -20 A, -55 V, 0.093 ohm, -10 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 7.3 A, 100 V, 22 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 300 V, 50 MHz, 625 mW, 500 mA, 25 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 80 A, 100 V, 18 mohm, 10 V, 4.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0041 ohm, 10 V, 3 V

INFINEON

单晶体管, IGBT, 140 A, 1.2 kV, 556 W, 1.2 kV, TO-247AC, 3 引脚

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 26 A, 60 V, 28 mohm, 10 V, 3 V

ROHM

单晶体管 双极, PNP, -120 V, 140 MHz, 200 mW, -50 mA, 180 hFE

POWEREX

晶体管, IGBT模块, 600W, Vceo:600V, 200A, 600V

INFINEON

晶体管, IGBT, 1200V, 50A

VISHAY

功率场效应管, MOSFET, N沟道, 23 A, 600 V, 0.132 ohm, 10 V

INFINEON

功率场效应管, MOSFET, N沟道, 20.7 A, 600 V, 0.19 ohm, 10 V, 4 V

NTE ELECTRONICS

射频晶体管, NPN, 15V, 600MHZ, TO-92

NTE ELECTRONICS

晶体管, PNP, 200mA, 25V, TO-92

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 8 A, 1.5 kV, 1.8 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, PNP, 60 V, 145 MHz, 500 mW, 1 A, 100 hFE

NEXPERIA

单晶体管 双极, NPN, 100 V, 100 MHz, 2 W, 1 A, 150 hFE