SOLID STATE

单晶体管 双极, NPN, 300 V, 2 MHz, 100 W, 5 A, 20 hFE

SOLID STATE

场效应管, MOSFET, N沟道, 60V, 1.7A, TO-39

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 52A

VISHAY

场效应管, MOSFET, N沟道, 600V, 47A, TO-247AD-3

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V

ON SEMICONDUCTOR

达林顿双极晶体管

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 17A, D2-PAK

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 60V, 300A, D2-PAK

INFINEON

晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0034 ohm, 4.5 V, 2.5 V

NEXPERIA

晶体管, MOSFET, N沟道, 43 A, 100 V, 15 mohm, 10 V, 3 V

ROHM

单晶体管 双极, NPN, 18 V, 1.5 GHz, 150 mW, 20 mA, 56 hFE

NEXPERIA

单晶体管 双极, PNP, -60 V, 100 MHz, 1.3 W, -1 A, 100 hFE

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 120 V, 200 W, 30 A, 1000 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 PNP, 50 V, -100 mA, 10 kohm, 10 kohm

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.48 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 7 A, 20 V, 0.019 ohm, 4.5 V, 700 mV

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV

INFINEON

晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 60V, 12A TO-252AA

NEXPERIA

单晶体管 双极, NPN, 50 V, 550 mW, 3 A, 300 hFE

INFINEON

晶体管, MOSFET, P沟道, -260 mA, -250 V, 7.5 ohm, -10 V, -1.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 33 A, 100 V, 0.039 ohm, 10 V, 2 V