ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 125 W, 10 A, 500 hFE

NTE ELECTRONICS

射频双极性晶体管

TOSHIBA

功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.3 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0036 ohm, 10 V, 2.8 V

NEXPERIA

单晶体管 双极, PNP, -400 V, 30 MHz, 730 mW, -500 mA, 155 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 4.7 A, 900 V, 2.5 ohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 40 A, 2.35 V, 220 W, 600 V, TO-247AC, 3 引脚

STMICROELECTRONICS

单晶体管 双极, NPN, 100 V, 30 W, 1 A, 75 hFE

STMICROELECTRONICS

晶体管, 射频FET, 80 V, 9 A, 108 W, 1 GHz, M250

NEXPERIA

单晶体管 双极, PNP, -30 V, 100 MHz, 250 mW, -100 mA, 220 hFE

ON SEMICONDUCTOR

晶体管, NPN

MULTICOMP

双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 65 V, 300 MHz, 500 mW, 100 mA, 110 hFE

NEXPERIA

双极晶体管阵列, NPN, 45 V, 380 mW, 100 mA, 290 hFE, SOT-457

VISHAY

晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

场效应管, N通道, MOSFET, 55V, 17A, D-PAK

NEXPERIA

晶体管, MOSFET, N沟道, 30 A, 30 V, 0.01917 ohm, 10 V, 1.7 V

VISHAY

晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.041 ohm, -2.5 V, -1.4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 30 A, 300 V, 37 mohm, 10 V, 3 V

MULTICOMP

单晶体管 双极, 达林顿, PNP, -60 V, 50 W, -2 A, 1000 hFE

NEXPERIA

单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 200 hFE

INFINEON

晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0046 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 42A, D-PAKS