INFINEON

晶体管, MOSFET, P沟道, 74 A, -55 V, 20 mohm, 20 V, 4 V

VISHAY

场效应管, MOSFET, N沟道

NEXPERIA

单晶体管 双极, NPN, 40 V, 105 MHz, 1.5 W, 15 A, 50 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 600 mA, 35 hFE

INFINEON

晶体管, MOSFET, N沟道, 84 A, 12 V, 8.5 mohm, 4.5 V, 1.9 V

INFINEON

晶体管, MOSFET, AEC-Q101, N沟道, 69 A, 55 V, 0.011 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0026 ohm, 10 V, 2.7 V

INFINEON

场效应管, MOSFET, 双N沟道, 2W, 8-SOIC

VISHAY

双路场效应管, MOSFET, N和P沟道, 7.6 A, 12 V, 0.014 ohm, 4.5 V, 1.5 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 达林顿, PNP, -100 V, 65 W, -5 A, 1000 hFE

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 75 A, 30 V, 0.004 ohm, 10 V, 800 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 23 A, 400 V, 0.15 ohm, 10 V, 3 V

NEXPERIA

双极晶体管阵列, 通用, NPN, PNP, 50 V, 180 mW, 150 mA, 250 hFE, SOT-363

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 58 A, 650 V, 0.037 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 60 V, 2 MHz, 200 W, 30 A, 2 hFE

INFINEON

晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0015 ohm, 10 V, 3 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

INFINEON

晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 4.5 A, 100 V, 60 mohm, 10 V, 5.5 V

VISHAY

晶体管, MOSFET, N沟道, 14 A, 500 V, 0.4 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 22 A, 30 V, 45 mohm, 10 V, 1 V

SOLID STATE

达林顿硅晶体管, NPN, TO-3

NEXPERIA

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V

VISHAY

场效应管, MOSFET, N沟道, 30V, 20A, SOIC