NEXPERIA

达林顿晶体管, NPN, 60V, 1A, 3-SOT-223

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV

INFINEON

晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V

INFINEON

晶体管, MOSFET, N沟道, 173 A, 60 V, 0.00275 ohm, 10 V, 3.7 V

INFINEON

单晶体管, IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 270 A, 60 V, 2.1 mohm, 20 V, 3 V

MULTICOMP

单晶体管 双极, 通用, NPN, 250 V, 4 MHz, 250 W, 16 A, 15 hFE

VISHAY

MOSFET, P CHANNEL, -20V, -9A, POWERPAK SC75-6

INFINEON

晶体管, MOSFET, N沟道, 180 A, 20 V, 4 mohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V

NEXPERIA

晶体管, MOSFET, N沟道, 57 A, 75 V, 12.5 mohm, 10 V, 2.3 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 200V, 52A, TO-220

DIODES INC.

单晶体管 双极, NPN, 300 V, 75 MHz, 500 mW, 500 mA, 100 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 14 A, 1 kV, 900 mohm, 10 V, 5 V

VISHAY

场效应管, MOSFET, P沟道, -30V, 12A, SC-70

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 6.5 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -15 V, 225 mW, -200 mA, 20 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V

VISHAY

晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V

NEXPERIA

双极晶体管阵列, PNP, 45 V, 200 mW, -100 mA, 290 hFE, SOT-666

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 120 A, 600 V, 378 W, 600 V, TO-247AB, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V