INFINEON

单晶体管, IGBT, 80 A, 1.42 V, 395 W, 650 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, AEC-Q101, N沟道, 88 A, 200 V, 0.0099 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 39 A, 600 V, 0.068 ohm, 10 V, 3 V

ON SEMICONDUCTOR

双极性晶体管, NPN, 250V, TO-220

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道

NTE ELECTRONICS

双极性晶体管, PNP, -80V TO-92

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00105 ohm, 10 V, 1.46 V

TOSHIBA

单晶体管 双极, NPN, 230 V, 30 MHz, 150 W, 15 A, 160 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 300 MHz, 500 mW, 100 mA, 200 hFE

NEXPERIA

单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE

INFINEON

晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V

DIODES INC.

晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V

NEXPERIA

单晶体管 双极, PNP, 80 V, 145 MHz, 650 mW, 1 A, 63 hFE

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 80 V, 70 W, 10 A, 750 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 8 A, 1 kV, 1.2 ohm, 10 V, 5 V

INFINEON

单晶体管, IGBT, N通道, 40 A, 2.36 V, 160 W, 600 V, TO-262, 3 引脚

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 PNP, 50 V, -100 mA, 2.2 kohm, 47 kohm

WOLFSPEED

功率场效应管, MOSFET, N沟道, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V

INFINEON

晶体管, MOSFET, N沟道, 34 A, 150 V, 0.0122 ohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0065 ohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 44 A, 800 V, 190 mohm, 10 V, 5 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V

STMICROELECTRONICS

单晶体管 双极, NPN, 700 V, 125 W, 8 A, 5 hFE