NEXPERIA

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm

STMICROELECTRONICS

单晶体管 双极, 达林顿, NPN, 350 V, 100 W, 4 A, 1500 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 24 A, 60 V, 0.036 ohm, 5 V, 1.7 V

INFINEON

晶体管, MOSFET, N沟道, 75 A, 40 V, 3.7 mohm, 10 V, 4 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 22 kohm, 22 kohm

VISHAY

晶体管, JFET, JFET, -55 V, 5 mA, 30 mA, -3 V, TO-206AA, JFET

INFINEON

单晶体管, IGBT, 60 A, 1.55 V, 412 W, 1 kV, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 40 A, 1.55 V, 288 W, 1.2 kV, TO-247, 3 引脚

INFINEON

场效应管阵列, MOSFET, 双P沟道, -30V, -9.2A, SOIC-8

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 19 A, 500 V, 0.22 ohm, 10 V, 5 V

TOSHIBA

单晶体管, IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 24 A, 1.8 V, 104 W, 600 V, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 40 A, 1.6 V, 310 W, 1.35 kV, TO-247, 3 引脚

INFINEON

场效应管, MOSFET, N沟道, 100V, 290A, TO-247AC

SOLID STATE

晶体管, MOSFET, N沟道, 1.1 A, 60 V, 2.7 ohm, 10 V, 1.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 200 mA, 20 V, 5 ohm, 4.5 V, 1.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -3 A, -20 V, 66 mohm, -4.5 V, -900 mV

INFINEON

晶体管, MOSFET, N沟道, 24.8 A, 500 V, 0.17 ohm, 13 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V

INFINEON

单晶体管, IGBT, 16 A, 1.7 V, 77 W, 600 V, TO-220AB, 3 引脚

NEXPERIA

单晶体管 双极, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE

ROHM

晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.038 ohm, 4.5 V, 1.5 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 19.8 A, 20 V, 0.0038 ohm, 10 V, 1 V

VISHAY

晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V