INFINEON

晶体管, MOSFET, P沟道, -80 A, -60 V, 0.021 ohm, -10 V, -3 V

VISHAY

晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.08 ohm, -4.5 V, -450 mV

INFINEON

单晶体管, IGBT, 50 A, 1.6 V, 365 W, 1.2 kV, TO-247, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 5 V

NEXPERIA

单晶体管 双极, 通用, NPN, 45 V, 250 mW, 100 mA, 90 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 150 mA, -20 V, 8 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 400 V, 2 W, 8 A, 200 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, PNP, -100V, TO-220

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 4.7 kohm

INFINEON

晶体管, MOSFET, N沟道, 68 A, 55 V, 0.011 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V

INFINEON

单晶体管, IGBT, 30 A, 1.7 V, 110 W, 1.2 kV, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 100 A, 1.85 V, 333 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 15 A, 100 V, 0.115 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 47 A, 55 V, 0.022 ohm, 10 V, 2 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 22 kohm, 22 kohm

INTERNATIONAL RECTIFIER

双路场效应管, N 通道, MOSFET, 30V, SOIC

VISHAY

晶体管, MOSFET, N沟道, 20 A, 30 V, 0.00425 ohm, 10 V, 1.1 V

VISHAY

晶体管, MOSFET, N沟道, 90 A, 100 V, 6.7 mohm, 10 V, 2.5 V

DIODES INC.

单晶体管 双极, NPN, 20 V, 150 MHz, 2 W, 3 A, 500 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 14 A, 600 V, 0.18 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V

NEXPERIA

单晶体管 双极, 双PNP, -45 V, 200 MHz, 1.25 W, -1 A, 1000 hFE