NEXPERIA

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm

ON SEMICONDUCTOR

双极晶体管

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 30V

VISHAY

MOSFET, P CHANNEL, -20V, -60A, POWERPAK SO-8

INFINEON

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.16 ohm, 10 V, 4.5 V

WOLFSPEED

功率场效应管, MOSFET, N沟道, 60 A, 1.2 kV, 0.04 ohm, 20 V, 2.6 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0043 ohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 60 A, 1.55 V, 349 W, 1.2 kV, TO-247, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

MOSFET, N CHANNEL, 40V, 240A, TO-263-7

INFINEON

单晶体管, IGBT, 50 A, 1.9 V, 180 W, 1.2 kV, TO-247AC, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 12 A, -60 V, 0.11 ohm, -10 V, -4 V

INFINEON

单晶体管, IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-220, 3 引脚

VISHAY

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 580 mohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 16 A, 1.7 V, 77 W, 600 V, TO-252AA, 3 引脚

VISHAY

场效应管, MOSFET, P沟道, -4.1A, -30V, 1.3W

NEXPERIA

晶体管 双极-射频, PNP, -30 V, 100 MHz, 200 mW, -100 mA, 800 hFE

INFINEON

晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 23 A, 400 V, 200 mohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, 60 V, 2 MHz, 40 W, 4 A, 2 hFE

INFINEON

晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V

INFINEON

晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 6.5 A, 1 kV, 1.6 ohm, 10 V, 3.75 V

VISHAY

场效应管, MOSFET, N沟道, 100V, 90A, TO-263-3

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 20 A, 250 V, 94 mohm, 10 V, 5 V