ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 80 A, 2.3 V, 290 W, 600 V, TO-247AB, 3 引脚

INFINEON

单晶体管, IGBT, 160 A, 1.5 V, 833 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, P沟道, -13 A, -30 V, 0.03 ohm, -10 V, -1.8 V

VISHAY

双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 0.1 ohm, -10 V, -3 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V

TEXAS INSTRUMENTS

单晶体管 双极, NPN, 36 V, 130 mA

NEXPERIA

单晶体管 双极, PNP, -40 V, 80 MHz, 1.5 W, -15 A, 30 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 30 A, 500 V, 120 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -2 V

NEXPERIA

单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 40 hFE

MULTICOMP

单晶体管 双极, PNP, -100 V, 3 MHz, 30 W, -2 A, 40 hFE

DIODES INC.

晶体管, MOSFET, P沟道, -35 A, -40 V, 0.007 ohm, -10 V, -2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -11 A, -20 V, 14 mohm, -4.5 V, -830 mV

INFINEON

功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.085 ohm, 10 V, 3.5 V

INFINEON

晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, 100 mA, 22 kohm, 47 kohm, 0.47 电阻比率

INFINEON

功率场效应管, MOSFET, N沟道, 24.3 A, 650 V, 0.14 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -55V, 11A, D-PAK

VISHAY

场效应管, MOSFET, N沟道, 20V, 7.5A, 1206

SEMELAB

单晶体管 双极, 通用, PNP, 120 V, 40 W, 2 A, 40 hFE

INFINEON

晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0017 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -120 V, 100 MHz, 500 mW, -50 mA, 300 hFE