ON SEMICONDUCTOR

单晶体管 双极, PNP, -100 V, 2 W, -5 A, 1000 hFE

VISHAY

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, 通用, PNP, -100 V, 3 MHz, 30 W, 1 A, 75 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 94 A, 30 V, 0.0047 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, AEC-Q100, PNP, -350 V, 30 MHz, 50 W, -4 A, 10 hFE

MULTICOMP

单晶体管 双极, 通用, NPN, 60 V, 3 MHz, 30 W, 1 A, 40 hFE

NEXPERIA

单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 63 hFE

DIODES INC.

单晶体管 双极, PNP, -500 V, 60 MHz, 2 W, 50 mA, 100 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 75 W, 8 A, 100 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

INFINEON

单晶体管, IGBT, 60 A, 1.95 V, 187 W, 600 V, TO-247, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V

INFINEON

晶体管, MOSFET, N沟道, 280 A, 40 V, 0.0018 ohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 75V, 82A TO-220AB

ROHM

晶体管, MOSFET, N沟道, 22 A, 60 V, 0.018 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V

ROHM

单晶体管 双极, NPN, 80 V, 300 MHz, 500 mW, 1.5 A, 120 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 33 A, 100 V, 52 mohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 20 A, 1.7 V, 310 W, 1.2 kV, TO-247, 3 引脚

VISHAY

场效应管, N通道, MOSFET, 1KV, 3.1A, TO-247

ON SEMICONDUCTOR/FAIRCHILD

射频 JFET