ON SEMICONDUCTOR/FAIRCHILD

晶体管, N沟道

INFINEON

单晶体管, IGBT, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 36 A, 500 V, 0.105 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 100V, 16A, D-PAK

INFINEON

晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 2 V

DIODES INC.

单晶体管 双极, NPN, 25 V, 220 MHz, 1 W, 5 A, 250 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 6.1 A, 40 V, 0.02 ohm, 10 V, 2 V

NXP

晶体管, JFET, JFET, 40 V, 5 mA, 3 V, SOT-23, JFET

INFINEON

晶体管, MOSFET, N沟道, 32 A, 560 V, 110 mohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 250 mohm, 30 V, 4 V

MULTICOMP

单晶体管 双极, PNP, -175 V, 200 MHz, 5 W, 1 A, 50 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -100 V, 60 W, -8 A, 750 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET™, N沟道, 279 A, 60 V, 0.0016 ohm, 10 V, 1.9 V

INFINEON

晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0155 ohm, 10 V, 2.7 V

INFINEON

功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -150 V, 300 MHz, 350 mW, -500 mA, 50 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 9.5 A, 900 V, 400 mohm, 10 V, 3.75 V

DIODES INC.

晶体管, MOSFET, P沟道, 10.4 A, -60 V, 55 mohm, -10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, NPN, 400 V, 113 W, 6 A, 8 hFE

INFINEON

单晶体管, IGBT, 60 A, 2.4 V, 375 W, 1.2 kV, TO-247, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V

NEXPERIA

单晶体管 双极, NPN, PNP, 30 V, 120 MHz, 2 W, 2 A, 150 hFE

MULTICOMP

单晶体管 双极, 通用, NPN, 25 V, 150 MHz, 600 mW, 200 mA, 420 hFE

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V