ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, SuperFET III, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚

VISHAY

MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3

VISHAY

晶体管, MOSFET, P沟道, 53 A, -60 V, 19.5 mohm, -10 V, -1 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 22 kohm

INFINEON

单晶体管, IGBT, 30 A, 1.7 V, 428 W, 900 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 24 A, 30 V, 0.04 ohm, 10 V, 1 V

DIODES INC.

单晶体管 双极, NPN, 80 V, 150 MHz, 1 W, 1 A, 100 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0023 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV

DIODES INC.

单晶体管 双极, PNP, 70 V, 160 MHz, 2 W, 2 A, 300 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.14 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 320 A, 40 V, 1.6 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 14 A, 250 V, 0.28 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 42 A, 40 V, 5.5 mohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 60 V, 200 W, 30 A, 1000 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 37 A, 30 V, 0.0099 ohm, 10 V, 1.57 V

ROHM

单晶体管 双极, PNP, -30 V, 320 MHz, 500 mW, -1 A, 270 hFE

INFINEON

晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0015 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 25 A, 55 V, 45 mohm, 10 V, 4 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -500 mA, 2.2 kohm, 10 kohm

VISHAY

场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V