VISHAY

晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.245 ohm, -10 V, -2 V

INFINEON

晶体管, MOSFET, N沟道, 240 A, 60 V, 1500 μohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, P沟道, 12 A, -200 V, 500 mohm, -10 V, -4 V

VISHAY

功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.55 ohm, 10 V, 4 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 4.7 kohm, 47 kohm

DIODES INC.

单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 600 hFE

MULTICOMP

单晶体管 双极, PNP, -45 V, 125 MHz, 500 mW, -1 A, 250 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 53.5 A, 600 V, 0.063 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 40 W, 10 A, 100 hFE

STMICROELECTRONICS

单晶体管 双极, 通用, NPN, 300 V, 50 MHz, 350 mW, 500 mA, 40 hFE

ON SEMICONDUCTOR

单晶体管, IGBT, 240 A, 3.6 V, 30 W, 430 V, TO-220F, 3 引脚

STMICROELECTRONICS

单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 引脚

MULTICOMP

双极晶体管

VISHAY

功率场效应管, MOSFET, N沟道, 6.7 A, 900 V, 1.6 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 3.2A, 200V, PowerPAK SO

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -100 V, 3 MHz, 65 W, -6 A, 15 hFE

ROHM

单晶体管 双极, PNP, -32 V, 100 MHz, 500 mW, -2 A, 82 hFE

NEXPERIA

单晶体管 双极, PNP, -20 V, 140 MHz, 420 mW, -2 A, 40 hFE

INFINEON

晶体管, MOSFET, P沟道, -180 A, -40 V, 0.0018 ohm, -10 V, -1.7 V

VISHAY

晶体管, MOSFET, P沟道, -14 A, -20 V, 0.006 ohm, -4.5 V, -400 mV

MULTICOMP

单晶体管 双极, 达林顿, PNP, -60 V, 65 W, -5 A, 1000 hFE

STMICROELECTRONICS

单晶体管 双极, PNP, 100 V, 3 MHz, 125 W, 25 A, 50 hFE