
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V

VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V

INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V

NEXPERIA
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.117 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 1.29 ohm, 10 V, 5 V

ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 140 V, 2 MHz, 200 mW, 15 A, 25 hFE

ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, 250 V, 4 MHz, 200 W, 16 A, 75 hFE

VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V

BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 5.5 V, 305 mA, 600 mW, 450 MHz, 10 GHz, SOT-343

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V