ON SEMICONDUCTOR

单晶体管 双极, 音频, PNP, 200 V, 30 MHz, 200 W, 15 A, 175 hFE

NEXPERIA

单晶体管 双极, NPN, 50 V, 100 MHz, 300 mW, 3 A, 300 hFE

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, NPN, 80V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 60 V, 12.5 W, 1.5 A, 100 hFE

ROHM

晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

INFINEON

功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V

NEXPERIA

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

INFINEON

功率场效应管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 40 V, 3100 μohm, 10 V, 1 V

TOSHIBA

晶体管, MOSFET, N沟道, 18 A, 500 V, 230 mohm, 10 V, 2 V

ROHM

晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm

STMICROELECTRONICS

单晶体管 双极, 达林顿, NPN, 100 V, 65 W, 5 A, 1000 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -800 mA, 50 hFE

TEXAS INSTRUMENTS

场效应管, N沟道, 大功率, 30V, 47A, SON-8

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -28 A, -30 V, 0.0052 ohm, -10 V, -1.8 V

INFINEON

单晶体管, IGBT, 79 A, 1.35 V, 230 W, 650 V, TO-247, 3 引脚

STMICROELECTRONICS

单晶体管 双极, 达林顿, PNP, 60 V, 40 W, 4 A, 750 hFE

VISHAY

晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 3 V

NEXPERIA

单晶体管 双极, NPN, 45 V, 180 MHz, 1.65 W, 1 A, 100 hFE

DIODES INC.

单晶体管 双极, NPN, 45 V, 300 MHz, 200 mW, 100 mA, 290 hFE

MULTICOMP

单晶体管 双极, NPN, 80 V, 70 W, 10 A, 750 hFE

INFINEON

单晶体管, IGBT, 50 A, 2.3 V, 333 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 79 A, 100 V, 0.0026 ohm, 10 V, 2.7 V

INFINEON

晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 4 V