VISHAY

功率场效应管, MOSFET, N沟道, 27 A, 600 V, 220 mohm, 10 V, 5 V

ROHM

双极晶体管阵列, 双路, NPN, PNP, 50 V, 150 mW, 150 mA, 120 hFE, SOT-363

DIODES INC.

晶体管, MOSFET, P沟道, -5.9 A, -100 V, 150 mohm, -10 V, -4 V

DIODES INC.

单晶体管 双极, PNP, 25 V, 100 MHz, 2 W, 3 A, 300 hFE

STMICROELECTRONICS

单晶体管 双极, PNP, -50 V, 1.4 W, -5 A, 70 hFE

MULTICOMP

单晶体管 双极, PNP, -80 V, 125 MHz, 500 mW, -1 A, 250 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 70 A, 2 V, 290 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 83 A, 150 V, 0.012 ohm, 10 V, 3 V

INFINEON

单晶体管, IGBT, 32 A, 1.55 V, 140 W, 600 V, TO-220AB, 3 引脚

NXP

晶体管, JFET, JFET, 30 V, 6 mA, 15 mA, 7.5 V, SOT-23, JFET

ROHM

晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0178 ohm, 10 V, 1.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 68.5 A, 700 V, 0.037 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.39 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 29 A, 55 V, 40 mohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, 沟槽式, N沟道, 4.5 A, 30 V, 0.033 ohm, 4.5 V, 650 mV

ROHM

晶体管 双极预偏置/数字, NPN, 双路 NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率

DIODES INC.

晶体管, MOSFET, N沟道, 700 mA, 60 V, 2 ohm, 10 V, 2.4 V

INFINEON

晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0027 ohm, 10 V, 1.7 V

INFINEON

晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V

INFINEON

MOSFET, N-CH, 75V, 59A, TO-220AB-3

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 40A

NEXPERIA

晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 30 V, 300 MHz, 500 mW, 100 mA, 420 hFE