VISHAY

晶体管, MOSFET, N沟道, 6.3 A, 30 V, 33 mohm, 10 V, 1.2 V

NEXPERIA

单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 53 A, 60 V, 10 mohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, AEC-Q101, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 75 A, 40 V, 2 mohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道

SEMELAB

晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V

STMICROELECTRONICS

单晶体管 双极, NPN, 450 V, 30 W, 4 A, 20 hFE

INFINEON

晶体管, MOSFET, N沟道, 56 A, 200 V, 40 mohm, 10 V, 4 V

ROHM

晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.045 ohm, -10 V, -2.5 V

TAIWAN SEMICONDUCTOR

晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 75 V, 5.8 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 20 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0018 ohm, 10 V, 2.5 V

STMICROELECTRONICS

单晶体管, IGBT, 63 A, 1.3 kV, 250 W, 1.3 kV, TO-247, 3 引脚

ROHM

单晶体管 双极, NPN, 80 V, 280 MHz, 500 mW, 2.5 A, 120 hFE

VISHAY

晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, 4 V

INFINEON

场效应管, MOSFET, N沟道, 200V, 24A, TO-220AB

VISHAY

晶体管, MOSFET, P沟道, 4.3 A, -200 V, 800 mohm, -10 V, -4 V

NEXPERIA

单晶体管 双极, 通用, NPN, 80 V, 250 mW, 500 mA, 100 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 450 V, 70 W, 2 A, 35 hFE

INFINEON

晶体管, MOSFET, N沟道, 43 A, 200 V, 0.054 ohm, 10 V, 5 V

INFINEON

单晶体管, IGBT, 24 A, 1.55 V, 140 W, 600 V, TO-220, 3 引脚

NEXPERIA

单晶体管 双极, NPN, 60 V, 130 MHz, 600 mW, 6.2 A, 500 hFE