STMICROELECTRONICS

单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 引脚

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道

MULTICOMP

单晶体管 双极, PNP, -80 V, 3 MHz, 1 W, -1 A, 40 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

双路场效应管, N 通道, MOSFET, 80V, SOIC

ON SEMICONDUCTOR

单晶体管, IGBT, 30 A, 1.7 V, 117 W, 600 V, TO-220, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V

NEXPERIA

双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC

INFINEON

双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV

INFINEON

单晶体管, IGBT, 20 A, 2.4 V, 170 W, 600 V, TO-220, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, 30V, 18A, SOIC

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 9 V, SOT-23, JFET

NTE ELECTRONICS

功率晶体管, NPN, 70V, TO-220

VISHAY

晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V

INFINEON

功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V

MULTICOMP

单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -500 mA, 160 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 58 A, 60 V, 0.0096 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 200V, 52A, D2-PAK

INFINEON

单晶体管, IGBT, 80 A, 1.55 V, 429 W, 1.2 kV, TO-247, 3 引脚