INFINEON

晶体管, MOSFET, N沟道, 56 A, 100 V, 0.0111 ohm, 10 V, 3 V

VISHAY

晶体管, 双路, N通道, 场效应管, MOSFET, 30V, 8.5A

MULTICOMP

单晶体管 双极, NPN, 400 V, 3 MHz, 175 W, 15 A, 8 hFE

ON SEMICONDUCTOR

单晶体管, IGBT, 40 A, 1.45 V, 64 W, 600 V, TO-3PF, 3 引脚

VISHAY

晶体管, MOSFET, N沟道, 34 A, 12 V, 2.1 mohm, 4.5 V, 400 mV

ROHM

单晶体管 双极, PNP, -30 V, 330 MHz, 500 mW, -3 A, 200 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0052 ohm, 10 V, 2.9 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 90 A, 30 V, 9 mohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V

SOLID STATE

单晶体管 双极, 达林顿, NPN, 400 V, 250 W, 40 A, 60 hFE

NEXPERIA

单晶体管 双极, NPN, 40 V, 450 MHz, 150 mW, 500 mA, 200 hFE

NEXPERIA

单晶体管 双极, PNP, -100 V, 125 MHz, 25 W, -3 A, 10 hFE

NEXPERIA

晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -1 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 8 ohm, 10 V, 3 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

NEXPERIA

单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 220 hFE

INFINEON

单晶体管, IGBT, 23 A, 1.55 V, 99 W, 600 V, TO-263, 3 引脚

VISHAY

双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 18 mohm, 10 V, 2.4 V

VISHAY

场效应管, MOSFET, P沟道, -20V, -4A, SOIC-8

VISHAY

晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V

ON SEMICONDUCTOR

双极性晶体管, NPN, 60V

INFINEON

晶体管, MOSFET, N沟道, 30 A, 55 V, 14 mohm, 10 V, 3 V

ROHM

晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

ON SEMICONDUCTOR

单晶体管 双极, NPN, 250 V, 4 MHz, 200 W, 16 A, 8 hFE