ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 10 V

ON SEMICONDUCTOR

双极性晶体管, PNP -60V TO-225

INFINEON

功率场效应管, MOSFET, N沟道, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V

INFINEON

单晶体管, IGBT, 96 A, 2.14 V, 330 W, 600 V, TO-247AC, 3 引脚

NXP

晶体管, 射频FET, 20 V, 20 mA, 200 mW, SOT-143B

ROHM

单晶体管 双极, NPN, 60 V, 210 MHz, 500 mW, 1 A, 120 hFE

INFINEON

晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.2 ohm, 10 V, 2 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N

INFINEON

晶体管, MOSFET, N沟道, 150 A, 30 V, 3.8 mohm, 10 V, 2.3 V

ROHM

晶体管, MOSFET, P沟道, -6 A, -45 V, 0.026 ohm, -10 V, -2.5 V

STMICROELECTRONICS

单晶体管 双极, 达林顿, NPN, 400 V, 125 W, 15 A, 300 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 350 V, 10 MHz, 20 W, 500 mA, 5 hFE

TOSHIBA

晶体管, MOSFET, N沟道, 70 A, 60 V, 5.8 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0023 ohm, 10 V, 2.7 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0028 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 57 A, 300 V, 29 mohm, 10 V, 5 V

ROHM

晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.35 ohm, 10 V, 2.5 V

VISHAY

场效应管, MOSFET, N沟道, 150V, 3A, SOIC

ROHM

单晶体管 双极, PNP, -80 V, 280 MHz, 500 mW, -2.5 A, 120 hFE

NEXPERIA

晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE

INFINEON

场效应管, MOSFET, N沟道, 30V, 16A, PQFN

INFINEON

晶体管, IGBT, 单路, 1.55V, 32A, TO-247AD

ON SEMICONDUCTOR

单晶体管 双极, 音频, NPN, 200 V, 4 MHz, 250 W, 16 A, 60 hFE

VISHAY

双路场效应管, MOSFET, N和P沟道, 430 mA, 8 V, 0.5 ohm, 4.5 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.43 ohm, 10 V, 3 V