TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET™, N沟道, 349 A, 60 V, 0.0013 ohm, 10 V, 1.8 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 250V, 25.5A, TO-220

VISHAY

场效应管, MOSFET, N沟道

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V

VISHAY

场效应管, MOSFET, N沟道, 200V, 18A, D2-PAK

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 1.56 W, 1 A, 30 hFE

ON SEMICONDUCTOR

单晶体管, IGBT, 60 A, 1.65 V, 167 W, 600 V, TO-247, 3 引脚

ON SEMICONDUCTOR

MOSFET Transistor, P Channel, -18.5 A, -60 V, 0.12 ohm, -5 V, -1.5 V

DIODES INC.

双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V

INFINEON

功率场效应管, MOSFET, N沟道, 26.7 A, 600 V, 0.17 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 250 V, 150 W, 15 A, 15 hFE

ROHM

晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 300 mV

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, NPN, 80 V, 500 mW, 1 A, 250 hFE

INFINEON

晶体管, MOSFET, N沟道, 50 A, 200 V, 0.04 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, 250 V, 150 W, 15 A, 15 hFE

DIODES INC.

单晶体管 双极, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE

INFINEON

晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V

SOLID STATE

晶体管, NPN, TO-3

INFINEON

功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V