NEXPERIA

晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 500 mA, DIP

ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 225 mW, 100 mA, 250 hFE

ON SEMICONDUCTOR

单晶体管 双极, PNP, -60 V, 200 MHz, 225 mW, -600 mA, 50 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 6.3 A, 30 V, 0.011 ohm, 10 V, 1.9 V

VISHAY

MOSFET, N CHANNEL, 30V, 3.6A, SOT-23-3

ON SEMICONDUCTOR

双极晶体管阵列, 通用, NPN, 40 V, 150 mW, 200 mA, 300 hFE, SOT-363

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 140 V, 50 MHz, 225 mW, 600 mA, 60 hFE

VISHAY

晶体管, MOSFET, N沟道, 2.2 A, 150 V, 0.112 ohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, PNP, -60 V, 200 MHz, 400 mW, -600 mA, 50 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 100 MHz, 625 mW, 800 mA, 170 hFE

DIODES INC.

晶体管, MOSFET, N沟道, 270 mA, 60 V, 7.5 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -30V, 3.5A SOT-23

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

VISHAY

双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V

ON SEMICONDUCTOR

功率晶体管, NPN, 80V, D-PAK

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 7 A, -60 V, 410 mohm, -10 V, -4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 60 V, 350 mW, 500 mA, 110 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V

VISHAY

晶体管, P沟道

ON SEMICONDUCTOR

单晶体管 双极, NPN, 40 V, 200 MHz, 347 mW, 200 mA, 30 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 30 V, 100 MHz, 225 mW, 100 mA, 110 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, 1.9 A, -20 V, 0.127 ohm, -4.5 V, -900 mV

NEXPERIA

单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 420 hFE

ON SEMICONDUCTOR

单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 100 hFE