STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0095 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, PNP, -80 V, 75 W, 8 A, 20000 hFE

SEMELAB

晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V

ROHM

晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率

ROHM

功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 20V, 50A, SOIC

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 250 V, 10 MHz, 40 W, 1 A, 10 hFE

VISHAY

晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -10 V, -3 V

INFINEON

晶体管, MOSFET, N沟道, 56 A, 250 V, 0.0145 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -250 V, 4 MHz, 200 W, -16 A, 8 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00179 ohm, 10 V, 1.7 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 58 A, 2.1 V, 195 W, 1.2 kV, TO-247AD, 3 引脚

NEXPERIA

单晶体管 双极, PNP, -60 V, 145 MHz, 650 mW, -1 A, 100 hFE

ON SEMICONDUCTOR

单晶体管, IGBT, 100 A, 1.45 V, 223 W, 600 V, TO-247, 3 引脚

NEXPERIA

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm

DIODES INC.

晶体管, MOSFET, P沟道, 3.8 A, -30 V, 75 mohm, 10 V, -1 V

ROHM

晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 1.6 A, -30 V, 190 mohm, -10 V, -1.6 V

VISHAY

功率场效应管, MOSFET, N沟道, 4.3 A, 1 kV, 3.5 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0115 ohm, 10 V, 2.85 V