NEXPERIA

晶体管, MOSFET, N沟道, 70 A, 30 V, 0.00245 ohm, 10 V, 1.78 V

INFINEON

功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.25 ohm, 10 V, 3 V

IXYS RF

晶体管, 射频FET, 500 V, 16 A, 590 W, 100 MHz, DE-275

ALLEGRO SANKEN

单晶体管 双极, NPN, 160 V, 50 MHz, 130 W, 15 A, 50 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 200 V, 10 MHz, 60 W, 7 A

DIODES INC.

双路场效应管, MOSFET, AEC-Q101, N和P, 500 mA, 60 V, 1.3 ohm, 10 V, 2.5 V

INFINEON

单晶体管, IGBT, 40 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 引脚

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 63 A, 60 V, 0.0102 ohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 42 A, 100 V, 21.4 mohm, 10 V, 3 V

ROHM

晶体管, MOSFET, P沟道, -39 A, -30 V, 0.0061 ohm, -10 V, -2.5 V

VISHAY

晶体管, IGBT阵列&模块, N沟道, 200 A, 1.6 V, 500 W, 600 V, ISOTOP

INFINEON

晶体管, MOSFET, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -60 V, 4 MHz, 200 W, -25 A, 4 hFE

MULTICOMP

单晶体管 双极, NPN, 100 V, 75 W, 8 A, 20000 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0055 ohm, 10 V, 2.6 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V

DIODES INC.

单晶体管 双极, NPN, 30 V, 180 MHz, 2.5 W, 5 A, 450 hFE

VISHAY

功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V

RENESAS

单晶体管, IGBT, 50 A, 1.7 V, 201.6 W, 600 V, TO-247, 3 引脚

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 55 V, 0.005 ohm, 10 V, 1 V

ROHM

单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 40 A, 1200 V, 348 W, 1.2 kV, TO-3PN, 3 引脚

ROHM

单晶体管 双极, PNP, -30 V, 430 MHz, 500 mW, -2 A, 200 hFE

DIODES INC.

单晶体管 双极, PNP, 20 V, 100 MHz, 600 mW, 2 A, 250 hFE

ROHM

晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 1 kohm, 10 kohm, 0.1 电阻比率