
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV

INFINEON
单晶体管, IGBT, 90 A, 1.65 V, 395 W, 650 V, TO-247, 3 引脚

INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0055 ohm, 10 V, 2.25 V

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 20 W, 6 A, 30 hFE

ON SEMICONDUCTOR
双极晶体管

ON SEMICONDUCTOR
双极性晶体管

INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4.5 V

DIODES INC.
双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 引脚

INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.7 V

INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 900 V, 1 ohm, 10 V, 3 V

NTE ELECTRONICS
达林顿双极性晶体管

STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.2 A, 900 V, 0.82 ohm, 10 V, 3.75 V

INFINEON
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 引脚