
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 3 ohm, 10 V, 3.75 V

INFINEON
单晶体管, IGBT, 60 A, 1.6 V, 160 W, 600 V, TO-247AC, 3 引脚

VISHAY
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 0.0195 ohm, -10 V, -3 V

INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 3 V

VISHAY
双路场效应管, MOSFET, 双N沟道, 160 A, 40 V, 0.0036 ohm, 10 V, 2 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V

NEXPERIA
双极晶体管阵列, 双PNP, -30 V, 250 mW, -100 mA, 100 hFE, SOT-143B

ON SEMICONDUCTOR
晶体管 双极-射频, PNP, -60 V, 50 MHz, 1.5 W, -3 A, 12 hFE

ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2 V, 294 W, 1.2 kV, TO-247, 3 引脚

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V

INFINEON
单晶体管, IGBT, 通用, 50 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 引脚

VISHAY
晶体管, MOSFET, P沟道, -12 A, -200 V, 500 mohm, -10 V, -4 V