ROHM

晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

INFINEON

晶体管, MOSFET, N沟道, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V

INFINEON

晶体管, MOSFET, P沟道, 3.6 A, -20 V, 90 mohm, -10 V, -1 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 13A

INFINEON

单晶体管, IGBT, N通道, 40 A, 1.7 V, 180 W, 1.2 kV, TO-247AC, 3 引脚

INFINEON

单晶体管, IGBT, 95 A, 1.65 V, 330 W, 600 V, TO-247AC, 3 引脚

ON SEMICONDUCTOR

双极性晶体管, PNP, -200V

ROHM

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.19 ohm, 10 V, 5 V

ROHM

晶体管, MOSFET, P沟道, -10 A, -20 V, 0.018 ohm, -4.5 V, -1 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.25 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 100 hFE

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 94 A, 300 V, 0.036 ohm, 10 V, 5 V

NTE ELECTRONICS

达林顿晶体管, NPN, 80V, TO-3

STMICROELECTRONICS

晶体管, 射频FET, 40 V, 5 A, 73 W, 480 MHz, 520 MHz, PowerSO-10RF

ROHM

Silicon Carbide Power MOSFET, N Channel, 4 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V

POWEREX

晶体管模块, IGBT, 600A

MICROCHIP

晶体管, MOSFET, N沟道, 175 mA, 300 V, 12 ohm, 0 V

VISHAY

晶体管, MOSFET, N沟道, 47 A, 500 V, 78 mohm, 10 V, 5 V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 28A

STMICROELECTRONICS

晶体管, IGBT, TO247

STMICROELECTRONICS

场效应管, MOSFET, 双N沟道, 60V, SOIC

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 39 A, 600 V, 0.055 ohm, 10 V, 3.2 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 47 kohm, 22 kohm

VISHAY

放大器, JFET, N沟道

MULTICOMP

双极性晶体管, NPN, 12V