ROHM

功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.5 ohm, 10 V, 4 V

ROHM

晶体管, MOSFET, N沟道, 5 A, 200 V, 0.54 ohm, 10 V, 5.25 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V

STMICROELECTRONICS

单晶体管, IGBT, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 引脚

VISHAY

晶体管, MOSFET, 沟槽式FET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 75 A, 120 V, 0.0092 ohm, 10 V, 3 V

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 60V, 0.0033Ω, 100A, TO-220-3

NTE ELECTRONICS

小信号双极性晶体管

NEXPERIA

晶体管, MOSFET, N沟道, 150 mA, 100 V, 5 ohm, 5 V, 2 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 202A, TO-220AB

ON SEMICONDUCTOR

单晶体管, IGBT, 60 A, 1.8 V, 250 W, 600 V, TO-247, 3 引脚

ON SEMICONDUCTOR

单晶体管, IGBT, 60 A, 1.45 V, 167 W, 600 V, TO-247, 3 引脚

ROHM

双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, N沟道, 42 A, 75 V, 22 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 83 A, 150 V, 0.012 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 50 hFE

VISHAY

场效应管, MOSFET

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, PNP, 80 V, 4 MHz, 85 W, 15 A, 1000 hFE

MULTICOMP

单晶体管 双极, PNP, -45 V, 12 MHz, 50 W, 10 A, 60 hFE

INFINEON

单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, PNP, -40V, SOIC

ON SEMICONDUCTOR

单晶体管, IGBT, 160 A, 1.7 V, 454 W, 1.2 kV, TO-247, 3 引脚

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 5.4 A, 400 V, 1 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 450 V, 13 MHz, 250 W, 30 A, 4 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 35 A, 100 V, 45 mohm, 10 V, 3 V