INTERNATIONAL RECTIFIER

IGBT, SINGLE, 1.6V, 65A, TO-247AC

NTE ELECTRONICS

双极性晶体管, NPN, 350V

ROHM

双路场效应管, MOSFET, 双N沟道, 4.5 A, 30 V, 0.025 ohm, 10 V, 2.5 V

STMICROELECTRONICS

单晶体管, IGBT, 9 A, 2.5 V, 25 W, 600 V, TO-220FP, 3 引脚

INFINEON

单晶体管, IGBT, 75 A, 2.35 V, 390 W, 600 V, TO-247AD, 3 引脚

NEXPERIA

晶体管, MOSFET, N沟道, 58 A, 40 V, 13 mohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, N沟道, 66 A, 100 V, 0.0125 ohm, 5 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 38 A, 300 V, 0.07 ohm, 10 V, 5 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, P沟道, -100V, 40A D2-PAK

VISHAY

晶体管, MOSFET, P沟道, 1.75 A, -200 V, 3 ohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 5 A, 55 V, 60 mohm, 10 V, 3 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm

MULTICOMP

单晶体管 双极, NPN, 400 V, 20 MHz, 40 W, 2 A, 30 hFE

NEXPERIA

单晶体管 双极, NPN, 45 V, 180 MHz, 500 mW, 1 A, 100 hFE

DIODES INC.

单晶体管 双极, 高增益, NPN, 40 V, 190 MHz, 350 mW, 4 A, 450 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 80 V, 4 MHz, 200 W, 25 A, 4 hFE

INFINEON

单晶体管, IGBT, 100 A, 1.6 V, 330 W, 600 V, TO-247AC, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

晶体管, NPN, 50MHz, HFE 60

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 9 A, 1.5 kV, 2.2 ohm, 10 V, 4 V

STMICROELECTRONICS

MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V

THAT CORPORATION

双极晶体管阵列, 低噪, NPN, 40 V, 20 mA, 100 hFE, DIP

INFINEON

晶体管, MOSFET, N沟道, 78 A, 150 V, 12 mohm, 10 V, 5 V

VISHAY

晶体管, MOSFET, P沟道, 50 mA, -40 V, 180 ohm, -20 V, -2.5 V

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 625 mW, -600 mA, 200 hFE