INFINEON

晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, IGBT, TO247

SOLID STATE

单晶体管 双极, NPN, 140 V, 150 W, 16 A, 5 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -14.5 A, -30 V, 0.0065 ohm, -10 V, -1.9 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 20 A, 2.1 V, 85 W, 1.2 kV, TO-220AB, 3 引脚

ON SEMICONDUCTOR

单晶体管, IGBT, 50 A, 2 V, 385 W, 1.2 kV, TO-247, 3 引脚

ROHM

晶体管, MOSFET, P沟道, -15 A, -100 V, 0.085 ohm, -10 V, -2.5 V

VISHAY

MOSFET, DUAL N CHANNEL, 30V, 4.6A, POWERPAK 1212-8

VISHAY

晶体管, MOSFET, N沟道, 35 A, 20 V, 4 mohm, 10 V, 1.2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 10 A, 70 V, 100 mohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, NPN, 80 V, 130 MHz, 1.6 W, 6 A, 200 hFE

ON SEMICONDUCTOR

达林顿双极晶体管

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 36 A, 500 V, 170 mohm, 10 V, 5 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 1.5 A, 500 V, 2.3 ohm, 10 V, 3.75 V

VISHAY

绝缘金属物质功率模块

NEXPERIA

单晶体管 双极, NPN, 20 V, 300 mW, 1 A, 470 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 37 A, 600 V, 30 mohm, 10 V, 3 V

THAT CORPORATION

双极晶体管阵列, 低噪, NPN, 40 V, 20 mA, 100 hFE, SOIC

ROHM

单晶体管 双极, PNP, -50 V, 140 MHz, 200 mW, -150 mA, 120 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

INFINEON

功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V

VISHAY

场效应管, P通道, MOSFET, -100V, 19A D2-PAK