ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V

INFINEON

单晶体管, IGBT, 15 A, 1.7 V, 254 W, 1.2 kV, TO-247, 3 引脚

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 900V, 51A

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 24 A, 1 kV, 390 mohm, 10 V, 5.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, 开关, PNP, -40 V, 250 MHz, 250 mW, -200 mA, 100 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 915 mA, 26 V, 0.127 ohm, 4.5 V, 760 mV

VISHAY

晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0033 ohm, 10 V, 2 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.108 ohm, 10 V, 2 V

INFINEON

单晶体管, IGBT, 240 A, 1.7 V, 750 W, 600 V, TO-274AA, 3 引脚

ON SEMICONDUCTOR

单晶体管 双极, NPN, 200 V, 8 MHz, 250 W, 40 A, 10 hFE

SOLID STATE

达林顿晶体管, NPN, 450V, 20A, TO-3

ON SEMICONDUCTOR

单晶体管 双极, NPN, 200 V, 3 MHz, 150 W, 15 A, 400 hFE

THAT CORPORATION

双极晶体管阵列, 低噪, NPN, PNP, 40 V, 20 mA, 100 hFE, SOIC

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 7 A, 600 V, 950 mohm, 10 V, 3.75 V

IXYS RF

晶体管, 射频FET, 200 V, 25 A, 590 W, 100 MHz, DE-275

INFINEON

晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V

VISHAY

晶体管, MOSFET, 沟槽式FET, N沟道, 11 A, 60 V, 0.008 ohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, NPN, 45 V, 250 MHz, 350 mW, 100 mA, 310 hFE