NEXPERIA

单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110 hFE

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 60V, 172A, TO-247AC-3

VISHAY

场效应管, N通道, MOSFET, 900V, 4.7A TO-247

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 40A

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V

VISHAY

场效应管, MOSFET, N沟道, 30V, 16A, SOIC

VISHAY

晶体管, MOSFET, 沟槽式FET, P沟道, -8 A, -60 V, 0.092 ohm, -10 V, -3 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, HiPerFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.12 ohm, -10 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 65 W, 8 A, 750 hFE

INFINEON

晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 60V, 12A, DPAK-3

NTE ELECTRONICS

达林顿晶体管, NPN, 120V, TO-3

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 4.7 kohm, 4.7 kohm

ROHM

双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.0123 ohm, 10 V, 2.5 V

ROHM

晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 84 A, 650 V, 0.024 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, PNP, -20 V, 140 MHz, 650 mW, -2 A, 85 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm

NXP

晶体管 双极-射频, NPN, 4.5 V, 18 GHz, 600 mW, 500 mA, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 40 A, 250 V, 0.051 ohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, N沟道, 14.1 A, 500 V, 0.35 ohm, 13 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 75V, 42A, D-PAKS

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 38 A, 600 V, 70 mohm, 10 V, 3.9 V